Impact of High-Temperature Annealing on Interfacial Layers Grown by O₂ Plasma on Si0.₅Ge_0.5 Substrates

Keyphrases

• Interfacial Layer 100%
• O2 Plasma 100%
• High-temperature Annealing 100%
• Annealing 33%
• Germanium Oxide 33%
• SiGe 16%
• Transmission Electron Microscope 16%
• Silica 16%
• X-ray Photoelectron Spectroscopy 16%
• Annealing Temperature 16%
• Silicon Oxide 16%
• Interface Traps 16%
• SiGe Layer 16%
• Dislocation 16%
• Metal-oxide-semiconductor Capacitor (MOSCAP) 16%
• Negligible Hysteresis 16%
• Pure Silicon 16%

Material Science

• Oxide Compound 100%
• Annealing 100%
• Germanium 66%
• Density 33%
• X-Ray Photoelectron Spectroscopy 33%
• Silicon 33%
• Capacitor 33%
• Metal Oxide 33%
• Oxide Semiconductor 33%

Engineering

• Interfacial Layer 100%
• Ray Photoelectron Spectroscopy 16%
• Annealing Temperature 16%
• Silicon Oxide 16%
• Metal Oxide Semiconductor 16%
• Silicon Dioxide 16%
• Interface Trap 16%