Impact of High-Temperature Annealing on Interfacial Layers Grown by O2 Plasma on Si0.5Ge0.5 Substrates

Meng Chien Lee, Hung Ru Lin, Wei Li Lee, Nien Ju Chung, Guang Li Luo, Chao Hsin Chien*

*此作品的通信作者

研究成果: Article同行評審

摘要

This article demonstrates the influence of high-Temperature annealing on an interfacial layer (IL) grown by O2 plasma on Si0.5Ge0.5 substrates. The X-ray photoelectron spectroscopy results revealed that under an annealing temperature of 1000 °C, the concentration of germanium oxide in the IL decreased, and an IL with pure silicon oxide (100%) was produced. With a decrease in germanium oxide concentration, the SiGe metal oxide semiconductor capacitor exhibited an excellent interface trap density of 1.6\times10$ 12 cm-2eV-1 with negligible hysteresis. Furthermore, compared with 1000 °C IL annealing, 800 °C IL annealing was more suitable for preferential SiO2 growth without relaxation and dislocation in the SiGe layer, as observed using a transmission electron microscope.

原文English
頁(從 - 到)1265-1270
頁數6
期刊IEEE Transactions on Electron Devices
69
發行號3
DOIs
出版狀態Published - 1 3月 2022

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