Impact of gate oxide thickness and channel length on junction-less poly-si TFTs

Cheng I. Lin; Horng Chih Lin; Tiao Yuan Huang

doi:10.1002/j.2168-0159.2012.tb05945.x

Impact of gate oxide thickness and channel length on junction-less poly-si TFTs

Cheng I. Lin, Horng Chih Lin, Tiao Yuan Huang

研究成果: Conference article › 同行評審

摘要

Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.

原文	English
頁（從 - 到）	943-946
頁數	4
期刊	Digest of Technical Papers - SID International Symposium
卷	43
發行號	1
DOIs	https://doi.org/10.1002/j.2168-0159.2012.tb05945.x
出版狀態	Published - 2012
事件	49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, 美國持續時間: 3 6月 2012 → 8 6月 2012

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10.1002/j.2168-0159.2012.tb05945.x

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abstract = "Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.",

author = "Lin, {Cheng I.} and Lin, {Horng Chih} and Huang, {Tiao Yuan}",

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AU - Lin, Horng Chih

AU - Huang, Tiao Yuan

PY - 2012

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N2 - Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.

AB - Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.

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U2 - 10.1002/j.2168-0159.2012.tb05945.x

DO - 10.1002/j.2168-0159.2012.tb05945.x

M3 - Conference article

AN - SCOPUS:85075684504

SN - 0097-966X

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EP - 946

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012

Y2 - 3 June 2012 through 8 June 2012

ER -

Impact of gate oxide thickness and channel length on junction-less poly-si TFTs

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