Impact of gate oxide thickness and channel length on junction-less poly-si TFTs

Cheng I. Lin, Horng Chih Lin, Tiao Yuan Huang

    研究成果: Conference article同行評審

    摘要

    Poly-Si junctionless (JL) TFTs with various structural parameters were characterized. Owing to the presence of abundant carriers in the channel and elimination of junctions, dramatically increased current drive is achieved with the JL device. Improved control over short-channel effects and characteristics fluctuation is also achieved with a thinner gate oxide.

    原文English
    頁(從 - 到)943-946
    頁數4
    期刊Digest of Technical Papers - SID International Symposium
    43
    發行號1
    DOIs
    出版狀態Published - 2012
    事件49th SID International Symposium, Seminar and Exhibition, dubbed Display Week, 2012 - Boston, United States
    持續時間: 3 6月 20128 6月 2012

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