Impact of gate-induced drain leakage current on the tail distribution of DRAM data retention time

K. Saino, S. Horiba, S. Uchiyama, Y. Takaishi, M. Takenaka, T. Uchida, Y. Takada, K. Koyama, H. Miyake, Chen-Ming Hu

研究成果: Article同行評審

70 引文 斯高帕斯(Scopus)

摘要

In this paper we propose a new model for leakage mechanism in tail-mode bits of DRAM data retention characteristics. For main-mode bits, leakage current can be attributed to junction thermal-generation leakage current. For tail-mode bits, it is found for the first time that Gate-Induced Drain Leakage (GIDL) current has a dominant impact. The root cause is electric field enhancement caused by metal precipitates located at the gate-drain overlap region.

原文English
頁(從 - 到)837-840
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 一月 2000

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