In this paper we propose a new model for leakage mechanism in tail-mode bits of DRAM data retention characteristics. For main-mode bits, leakage current can be attributed to junction thermal-generation leakage current. For tail-mode bits, it is found for the first time that Gate-Induced Drain Leakage (GIDL) current has a dominant impact. The root cause is electric field enhancement caused by metal precipitates located at the gate-drain overlap region.
|頁（從 - 到）||837-840|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1 一月 2000|