Impact of Dual-Gate Configuration on the Endurance of Ferroelectric Thin-Film Transistors With Nanosheet Polycrystalline-Silicon Channel Film

Keyphrases

• Polysilicon 100%
• Nanosheets 100%
• Dual Gate 100%
• Ferroelectric Thin-film Transistors 100%
• Dual-gate Configuration 100%
• Single Gate 83%
• Subthreshold Swing 33%
• Memory Window 33%
• Top Gate 33%
• Pulse Voltage 33%
• Charge Trapping Effect 33%
• Ferroelectric Dielectric 33%
• Silica 16%
• Gate Dielectric 16%
• Dielectric Layer 16%
• Threshold Voltage 16%
• Operation Mode 16%
• Transfer Characteristics 16%
• Back Gate 16%
• Bias Effect 16%
• Back-gate Bias 16%
• Endurance Characteristics 16%
• Gate Operation 16%
• Low Impact 16%
• Dual-gate Structure 16%
• Lattice Damage 16%

Material Science

• Silicon 100%
• Thin-Film Transistor 100%
• Nanosheet 100%
• Ferroelectric Thin Films 100%
• Dielectric Material 75%
• Ferroelectric Material 50%
• Charge Trapping 50%