TY - JOUR
T1 - Impact of Crystallization Method on Poly-Si Tunnel FETs
AU - Chen, Yi Hsuan
AU - Ma, William Cheng Yu
AU - Lin, Jer Yi
AU - Lin, Chun Yen
AU - Hsu, Po Yang
AU - Huang, Chi Yuan
AU - Chao, Tien-Sheng
PY - 2015/10/1
Y1 - 2015/10/1
N2 - In this letter, the impact of crystallization method on the electrical characteristics of polycrystalline silicon (poly-Si) tunnel field-effect transistors (TFETs) is investigated. Different crystallization methods may result in different amounts of interface traps (Nit) and bulk traps (NGB). TFETs crystallized with solid-phase crystallization (SPC) and metal-induced lateral crystallization (MILC) were fabricated and compared. In comparison with the SPC TFETs, the MILC TFETs exhibit ∼ 4.5× higher ON-state current ION, subthreshold swing reduction ΔS.S. ∼ 202 mV/decade, and larger ∼ 7.2× ON/OFF current ratio. According to the measurement of a monitor poly-Si thin-film transistor, replacing SPC with MILC results in a reduced Nit ∼ 0.60× and a reduced NGB ∼ 0.36×, respectively. It can enhance the gate-to-tunnel junction controllability. Consequently, lowering trap density favors reducing power consumption of TFETs and provides a promising solution for future low-power driving circuits in portable electronics.
AB - In this letter, the impact of crystallization method on the electrical characteristics of polycrystalline silicon (poly-Si) tunnel field-effect transistors (TFETs) is investigated. Different crystallization methods may result in different amounts of interface traps (Nit) and bulk traps (NGB). TFETs crystallized with solid-phase crystallization (SPC) and metal-induced lateral crystallization (MILC) were fabricated and compared. In comparison with the SPC TFETs, the MILC TFETs exhibit ∼ 4.5× higher ON-state current ION, subthreshold swing reduction ΔS.S. ∼ 202 mV/decade, and larger ∼ 7.2× ON/OFF current ratio. According to the measurement of a monitor poly-Si thin-film transistor, replacing SPC with MILC results in a reduced Nit ∼ 0.60× and a reduced NGB ∼ 0.36×, respectively. It can enhance the gate-to-tunnel junction controllability. Consequently, lowering trap density favors reducing power consumption of TFETs and provides a promising solution for future low-power driving circuits in portable electronics.
KW - Tunnel field-effect-transistor (TFET)
KW - and metal-induced lateral crystallization (MILC)
KW - poly-Si thin-film transistor (poly-Si TFTs)
KW - trap density
UR - http://www.scopus.com/inward/record.url?scp=84961141977&partnerID=8YFLogxK
U2 - 10.1109/LED.2015.2468060
DO - 10.1109/LED.2015.2468060
M3 - Article
AN - SCOPUS:84961141977
VL - 36
SP - 1060
EP - 1062
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 10
M1 - 7194770
ER -