TY - GEN
T1 - Impact of Contact Resistance on 2D Negative-Capacitance FETs
AU - Lu, Po Sheng
AU - You, Wei Xiang
AU - Su, Pin
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/26
Y1 - 2018/7/26
N2 - In this work, we investigate and analyze the impact of contact resistance (RSD) on the negative-capacitance FET with 2D transition-metal-dichalco-genide channel (NC-TMDFET). We report a ferroelectric capacitance (CFE) feedback mechanism of the NC-TMDFET that can be used to suppress the impact of RSD. Our study indicates that low remnant polarization (Pr) ferroelectric material can be utilized to leverage this effect for NC-TMDFETs under the presence of significant RSD.
AB - In this work, we investigate and analyze the impact of contact resistance (RSD) on the negative-capacitance FET with 2D transition-metal-dichalco-genide channel (NC-TMDFET). We report a ferroelectric capacitance (CFE) feedback mechanism of the NC-TMDFET that can be used to suppress the impact of RSD. Our study indicates that low remnant polarization (Pr) ferroelectric material can be utilized to leverage this effect for NC-TMDFETs under the presence of significant RSD.
KW - 2D-TMD and contact resistance
KW - Negative-Capacitance FET
KW - ferroelectric material
UR - http://www.scopus.com/inward/record.url?scp=85051533382&partnerID=8YFLogxK
U2 - 10.1109/EDTM.2018.8421522
DO - 10.1109/EDTM.2018.8421522
M3 - Conference contribution
AN - SCOPUS:85051533382
SN - 9781538637111
T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
SP - 187
EP - 189
BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Y2 - 13 March 2018 through 16 March 2018
ER -