Impact of bonding temperature on the performance of In0.6Ga 0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology

Che Yang Chiang; Heng-Tung Hsu; Chien I. Kuo; Ching Te Wang; Wee Chin Lim; Edward Yi Chang

doi:10.1109/APMC.2012.6421784

Impact of bonding temperature on the performance of In_0.6Ga _0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology

Che Yang Chiang^*, Heng-Tung Hsu, Chien I. Kuo, Ching Te Wang, Wee Chin Lim, Edward Yi Chang

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this study, we fabricated 150-nm In_0.6Ga_0.4As mHEMT devices using in-house fabrication process. The devices were packaged using FCOB technology on organic substrates. The packaged device exhibited favorable DC characteristics with I_DS = 350 mA/mm and a transconductance of 600 mS/mm at V_DS = 0.5V with a maximum available gain (MAG) 6.5 dB at 60 GHz. The impact of temperature setting during the bonding process on the DC and RF performance was experimentally investigated. RF performance degradation was observed at high bonding temperature due to the induced thermomechanical stress. The stress was mainly from the mismatch in the coefficient of thermal expansion (CTE) of the GaAs chip and organic substrate.

原文	English
主出版物標題	2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
頁面	938-940
頁數	3
DOIs	https://doi.org/10.1109/APMC.2012.6421784
出版狀態	Published - 2012
事件	2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, 台灣持續時間: 4 12月 2012 → 7 12月 2012

出版系列

名字	Asia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference	2012 Asia-Pacific Microwave Conference, APMC 2012
國家/地區	台灣
城市	Kaohsiung
期間	4/12/12 → 7/12/12

存取文件

10.1109/APMC.2012.6421784

其它文件與鏈接

Link to publication in Scopus

引用此

Chiang, C. Y., Hsu, H.-T., Kuo, C. I., Wang, C. T., Lim, W. C., & Chang, E. Y. (2012). Impact of bonding temperature on the performance of In_0.6Ga _0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology. 於 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings (頁 938-940). 文章 6421784 (Asia-Pacific Microwave Conference Proceedings, APMC). https://doi.org/10.1109/APMC.2012.6421784

Chiang, Che Yang ; Hsu, Heng-Tung ; Kuo, Chien I. 等. / Impact of bonding temperature on the performance of In_0.6Ga _0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology. 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings. 2012. 頁 938-940 (Asia-Pacific Microwave Conference Proceedings, APMC).

@inproceedings{851ac888fd5f404cabbe603263a83b77,

title = "Impact of bonding temperature on the performance of In0.6Ga 0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology",

abstract = "In this study, we fabricated 150-nm In0.6Ga0.4As mHEMT devices using in-house fabrication process. The devices were packaged using FCOB technology on organic substrates. The packaged device exhibited favorable DC characteristics with IDS = 350 mA/mm and a transconductance of 600 mS/mm at VDS = 0.5V with a maximum available gain (MAG) 6.5 dB at 60 GHz. The impact of temperature setting during the bonding process on the DC and RF performance was experimentally investigated. RF performance degradation was observed at high bonding temperature due to the induced thermomechanical stress. The stress was mainly from the mismatch in the coefficient of thermal expansion (CTE) of the GaAs chip and organic substrate.",

keywords = "HEMTs, bonding, flip chip, stress, thermal expansion",

author = "Chiang, {Che Yang} and Heng-Tung Hsu and Kuo, {Chien I.} and Wang, {Ching Te} and Lim, {Wee Chin} and Chang, {Edward Yi}",

year = "2012",

doi = "10.1109/APMC.2012.6421784",

language = "English",

isbn = "9781457713309",

series = "Asia-Pacific Microwave Conference Proceedings, APMC",

pages = "938--940",

booktitle = "2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings",

note = "2012 Asia-Pacific Microwave Conference, APMC 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

}

Chiang, CY, Hsu, H-T, Kuo, CI, Wang, CT, Lim, WC & Chang, EY 2012, Impact of bonding temperature on the performance of In_0.6Ga _0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology. 於 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings., 6421784, Asia-Pacific Microwave Conference Proceedings, APMC, 頁 938-940, 2012 Asia-Pacific Microwave Conference, APMC 2012, Kaohsiung, 台灣, 4/12/12. https://doi.org/10.1109/APMC.2012.6421784

Impact of bonding temperature on the performance of In_0.6Ga _0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology. / Chiang, Che Yang; Hsu, Heng-Tung; Kuo, Chien I. 等.
2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings. 2012. p. 938-940 6421784 (Asia-Pacific Microwave Conference Proceedings, APMC).

研究成果: Conference contribution › 同行評審

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AU - Chiang, Che Yang

AU - Hsu, Heng-Tung

AU - Kuo, Chien I.

AU - Wang, Ching Te

AU - Lim, Wee Chin

AU - Chang, Edward Yi

PY - 2012

Y1 - 2012

N2 - In this study, we fabricated 150-nm In0.6Ga0.4As mHEMT devices using in-house fabrication process. The devices were packaged using FCOB technology on organic substrates. The packaged device exhibited favorable DC characteristics with IDS = 350 mA/mm and a transconductance of 600 mS/mm at VDS = 0.5V with a maximum available gain (MAG) 6.5 dB at 60 GHz. The impact of temperature setting during the bonding process on the DC and RF performance was experimentally investigated. RF performance degradation was observed at high bonding temperature due to the induced thermomechanical stress. The stress was mainly from the mismatch in the coefficient of thermal expansion (CTE) of the GaAs chip and organic substrate.

AB - In this study, we fabricated 150-nm In0.6Ga0.4As mHEMT devices using in-house fabrication process. The devices were packaged using FCOB technology on organic substrates. The packaged device exhibited favorable DC characteristics with IDS = 350 mA/mm and a transconductance of 600 mS/mm at VDS = 0.5V with a maximum available gain (MAG) 6.5 dB at 60 GHz. The impact of temperature setting during the bonding process on the DC and RF performance was experimentally investigated. RF performance degradation was observed at high bonding temperature due to the induced thermomechanical stress. The stress was mainly from the mismatch in the coefficient of thermal expansion (CTE) of the GaAs chip and organic substrate.

KW - HEMTs

KW - bonding

KW - flip chip

KW - stress

KW - thermal expansion

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BT - 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings

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Chiang CY, Hsu HT, Kuo CI, Wang CT, Lim WC, Chang EY. Impact of bonding temperature on the performance of In_0.6Ga _0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology. 於 2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings. 2012. p. 938-940. 6421784. (Asia-Pacific Microwave Conference Proceedings, APMC). doi: 10.1109/APMC.2012.6421784