Impact of bonding temperature on the performance of In0.6Ga 0.4As Metamorphic High Electron Mobility Transistor (mHEMT) device packaged using Flip-Chip-on-Board (FCOB) technology

Che Yang Chiang*, Heng-Tung Hsu, Chien I. Kuo, Ching Te Wang, Wee Chin Lim, Edward Yi Chang

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

In this study, we fabricated 150-nm In0.6Ga0.4As mHEMT devices using in-house fabrication process. The devices were packaged using FCOB technology on organic substrates. The packaged device exhibited favorable DC characteristics with IDS = 350 mA/mm and a transconductance of 600 mS/mm at VDS = 0.5V with a maximum available gain (MAG) 6.5 dB at 60 GHz. The impact of temperature setting during the bonding process on the DC and RF performance was experimentally investigated. RF performance degradation was observed at high bonding temperature due to the induced thermomechanical stress. The stress was mainly from the mismatch in the coefficient of thermal expansion (CTE) of the GaAs chip and organic substrate.

原文English
主出版物標題2012 Asia-Pacific Microwave Conference, APMC 2012 - Proceedings
頁面938-940
頁數3
DOIs
出版狀態Published - 2012
事件2012 Asia-Pacific Microwave Conference, APMC 2012 - Kaohsiung, Taiwan
持續時間: 4 12月 20127 12月 2012

出版系列

名字Asia-Pacific Microwave Conference Proceedings, APMC

Conference

Conference2012 Asia-Pacific Microwave Conference, APMC 2012
國家/地區Taiwan
城市Kaohsiung
期間4/12/127/12/12

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