Impact of asymmetrical source/drain offsets on the operation of dual-gated poly-Si junctionless nanowire transistors

You Tai Chang, Ruei Jen Wu, Kang Ping Peng, Chun Jung Su, Pei-Wen Li, Horng-Chih Lin*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

In this paper, we present the fabrication and characterization of gate-all-around (GAA) junctionless (JL) poly-Si nanowire (NW) transistors with a dual-gated configuration, in which a sub-gate is placed over a shorter main-gate in order to control the NW potential for the offset regions between the main-gate and S/D regions. The fabricated transistors exhibit well-behaved performance with on/off current ratio of ~106 and subthreshold swing of 76 mV/decade. Inevitable misalignment of lithographic patterning for the main-gate structure leads to asymmetrical channel offsets between the main-gate to source pad and to drain pad, respectively. That is, the length of un-gated NW close to the source pad differs from that to the drain pad. An important finding of notes is that when drain bias is applied to the end of the NW with a longer channel offset, the drain current is lower than that applied to the shorter end. Such a trend become less profound as the sub-gate bias increases.

原文American English
文章編號109613
期刊Vacuum
181
DOIs
出版狀態Published - 11月 2020

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