Impact of annealing environment on performance of InWZnO conductive bridge random access memory

Chih Chieh Hsu; Po Tsun Liu; Kai Jhih Gan; Dun Bao Ruan; Yu Chuan Chiu; Simon M. Sze

doi:10.1016/j.vacuum.2021.110321

Impact of annealing environment on performance of InWZnO conductive bridge random access memory

Chih Chieh Hsu, Po Tsun Liu^*, Kai Jhih Gan, Dun Bao Ruan, Yu Chuan Chiu, Simon M. Sze

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光電工程學系

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摘要

In this paper, the characteristics of conductive bridge random access memory (CBRAM) with novel material tungsten doped indium zinc oxide (W doped InZnO, IWZO) acting as switching material in different annealing atmosphere have been investigated. The endurance cycles of annealed IWZO CBRAM devices are obviously increased to 10⁴ cycles, while even longer retention time can be achieved at 85 °C, compared with the as-deposited IWZO CBRAM device. Besides, after annealing in nitrogen atmosphere, the uniformity of the resistance state has been greatly improved. By detailed X-ray photoelectron spectroscopy analysis, the better electrical properties can be attributed to the generated oxygen vacancies during nitrogen annealing. As a result, that notable improvement in IWZO CBRAM may show its potential for future integrated display circuit applications, just by utilizing simple annealing process.

原文	English
文章編號	110321
期刊	Vacuum
卷	191
DOIs	https://doi.org/10.1016/j.vacuum.2021.110321
出版狀態	Published - 9月 2021

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10.1016/j.vacuum.2021.110321

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title = "Impact of annealing environment on performance of InWZnO conductive bridge random access memory",

abstract = "In this paper, the characteristics of conductive bridge random access memory (CBRAM) with novel material tungsten doped indium zinc oxide (W doped InZnO, IWZO) acting as switching material in different annealing atmosphere have been investigated. The endurance cycles of annealed IWZO CBRAM devices are obviously increased to 104 cycles, while even longer retention time can be achieved at 85 °C, compared with the as-deposited IWZO CBRAM device. Besides, after annealing in nitrogen atmosphere, the uniformity of the resistance state has been greatly improved. By detailed X-ray photoelectron spectroscopy analysis, the better electrical properties can be attributed to the generated oxygen vacancies during nitrogen annealing. As a result, that notable improvement in IWZO CBRAM may show its potential for future integrated display circuit applications, just by utilizing simple annealing process.",

keywords = "Conductive-bridge RAM (CBRAM), Endurance cycle, InWZnO, Low temperature process, Oxygen vacancy modulation",

author = "Hsu, {Chih Chieh} and Liu, {Po Tsun} and Gan, {Kai Jhih} and Ruan, {Dun Bao} and Chiu, {Yu Chuan} and Sze, {Simon M.}",

note = "Publisher Copyright: {\textcopyright} 2021",

year = "2021",

month = sep,

doi = "10.1016/j.vacuum.2021.110321",

language = "English",

volume = "191",

journal = "Vacuum",

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T1 - Impact of annealing environment on performance of InWZnO conductive bridge random access memory

AU - Hsu, Chih Chieh

AU - Liu, Po Tsun

AU - Gan, Kai Jhih

AU - Ruan, Dun Bao

AU - Chiu, Yu Chuan

AU - Sze, Simon M.

PY - 2021/9

Y1 - 2021/9

N2 - In this paper, the characteristics of conductive bridge random access memory (CBRAM) with novel material tungsten doped indium zinc oxide (W doped InZnO, IWZO) acting as switching material in different annealing atmosphere have been investigated. The endurance cycles of annealed IWZO CBRAM devices are obviously increased to 104 cycles, while even longer retention time can be achieved at 85 °C, compared with the as-deposited IWZO CBRAM device. Besides, after annealing in nitrogen atmosphere, the uniformity of the resistance state has been greatly improved. By detailed X-ray photoelectron spectroscopy analysis, the better electrical properties can be attributed to the generated oxygen vacancies during nitrogen annealing. As a result, that notable improvement in IWZO CBRAM may show its potential for future integrated display circuit applications, just by utilizing simple annealing process.

AB - In this paper, the characteristics of conductive bridge random access memory (CBRAM) with novel material tungsten doped indium zinc oxide (W doped InZnO, IWZO) acting as switching material in different annealing atmosphere have been investigated. The endurance cycles of annealed IWZO CBRAM devices are obviously increased to 104 cycles, while even longer retention time can be achieved at 85 °C, compared with the as-deposited IWZO CBRAM device. Besides, after annealing in nitrogen atmosphere, the uniformity of the resistance state has been greatly improved. By detailed X-ray photoelectron spectroscopy analysis, the better electrical properties can be attributed to the generated oxygen vacancies during nitrogen annealing. As a result, that notable improvement in IWZO CBRAM may show its potential for future integrated display circuit applications, just by utilizing simple annealing process.

KW - Conductive-bridge RAM (CBRAM)

KW - Endurance cycle

KW - InWZnO

KW - Low temperature process

KW - Oxygen vacancy modulation

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DO - 10.1016/j.vacuum.2021.110321

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SN - 0042-207X

VL - 191

JO - Vacuum

JF - Vacuum

M1 - 110321

ER -

Impact of annealing environment on performance of InWZnO conductive bridge random access memory

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