Imaging layer number and stacking order through formulating Raman fingerprints obtained from hexagonal single crystals of few layer graphene

Jih Shang Hwang*, Yu Hsiang Lin, Jeong Yuan Hwang, Railing Chang, Surojit Chattopadhyay, Chang Jiang Chen, Peilin Chen, Hai Pang Chiang, Tsong Ru Tsai, Li Chyong Chen, Kuei Hsien Chen

*此作品的通信作者

研究成果: Article同行評審

53 引文 斯高帕斯(Scopus)

摘要

Quantitative mapping of layer number and stacking order for CVD-grown graphene layers is realized by formulating Raman fingerprints obtained on two stepwise stacked graphene single-crystal domains with AB Bernal and turbostratic stacking (with ∼30°interlayer rotation), respectively. The integrated peak area ratio of the G band to the Si band, AG/ASi, is proven to be a good fingerprint for layer number determination, while the area ratio of the 2D and G bands, A2D/AG is shown to differentiate effectively between the two different stacking orders. The two fingerprints are well formulated and resolve, quantitatively, the layer number and stacking type of various graphene domains that used to rely on tedious transmission electron microscopy for structural analysis. The approach is also noticeable in easy discrimination of the turbostratic graphene region (∼30° rotation), the structure of which resembles the well known high-mobility graphene R30/R2± fault pairs found on the vacuum-annealed C-face SiC and suggests an electron mobility reaching 14 700 cm3 V-1 s-1. The methodology may shed light on monitoring and control of high-quality graphene growth, and thereby facilitate future mass production of potential high-speed graphene applications.

原文English
文章編號015702
期刊Nanotechnology
24
發行號1
DOIs
出版狀態Published - 11 1月 2013

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