Hysteresis-Free Gate-All-Around Stacked Poly-Si Nanosheet Channel Ferroelectric HfxZr1-xO2Negative Capacitance FETs With Internal Metal Gate and NH3Plasma Nitridation

Chia Chin Lee, Dong Ru Hsieh, Shou Wei Li, Yi Shan Kuo, Tien Sheng Chao

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Engineering & Materials Science

Chemical Compounds