Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics

Po Hsun Ho*, Jun Ru Chang, Chun Hsiang Chen, Cheng Hung Hou, Chun Hao Chiang, Min Chuan Shih, Hung Chang Hsu, Wen Hao Chang, Jing Jong Shyue, Ya Ping Chiu*, Chun Wei Chen*

*此作品的通信作者

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Contact doping is considered crucial for reducing the contact resistance of two-dimensional (2D) transistors. However, a process for achieving robust contact doping for 2D electronics is lacking. Here, we developed a two-step doping method for effectively doping 2D materials through a defect-repairing process. The method achieves strong and hysteresis-free doping and is suitable for use with the most widely used transition-metal dichalcogenides. Through our method, we achieved a record-high sheet conductance (0.16 mS·sq-1 without gating) of monolayer MoS2 and a high mobility and carrier concentration (4.1 × 1013 cm-2). We employed our robust method for the successful contact doping of a monolayer MoS2 Au-contact device, obtaining a contact resistance as low as 1.2 kΩ·μm. Our method represents an effective means of fabricating high-performance 2D transistors.

原文English
頁(從 - 到)2653-2660
頁數8
期刊ACS Nano
17
發行號3
DOIs
出版狀態Published - 14 2月 2023

指紋

深入研究「Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics」主題。共同形成了獨特的指紋。

引用此