Hydrogenated ZnO thin film with p-type surface conductivity from plasma treatment

V. Gurylev, Artur Useinov, P. Y. Hsieh, C. Y. Su, T. P. Perng

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Fabrication of a ZnO p-n homojunction within a single structure by a simple process is a challenging task. In this work, an intrinsic p-type surface conductive layer of ZnO with a controlled concentration of holes over n-type conductive bulk was obtained by a one-step room-temperature process via hydrogen plasma treatment. Non-contact surface sensitive techniques, such as Kelvin probe force microscopy and conductive force atomic microscopy, confirmed the existence of surface p-type conductivity through analyzing the distribution and concentration of charge carriers on the topmost surface of hydrogenated ZnO. A theoretical framework was constructed to provide a rationale of the p-type surface conductivity and justify its relation to the treatment time. It is believed that this finding will open a new possibility for the fabrication of ZnO based p-n junction devices.

原文English
文章編號24LT02
頁(從 - 到)1-6
頁數6
期刊Journal of Physics D: Applied Physics
50
發行號24
DOIs
出版狀態Published - 26 5月 2017

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