Hydrogenated amorphous silicon films prepared at high substrate temperature: Properties and light induced degradation

Keyphrases

• A-Si 100%
• Light-induced Degradation 100%
• Temperature Property 100%
• High Substrate Temperature 100%
• Hydrogenated Amorphous Silicon Films 100%
• Annealing 66%
• Electrical Properties 33%
• Schottky Barrier 33%
• Substrate Temperature 33%
• Hydrogenated Amorphous Silicon 33%
• Optoelectronic Properties 33%
• Visible Region 33%
• Absorption Measurement 33%
• Deposition Parameters 33%
• Microstructure Properties 33%
• Dangling Bonds 33%
• Barrier Device 33%
• Electrode Structure 33%
• Density Measurement 33%
• Spin Density 33%
• Coplanar Electrodes 33%
• Infrared Region 33%
• Nature of Light 33%
• Light Induced Defects 33%

Engineering

• Substrate Temperature 100%
• Hydrogenated Amorphous Silicon 100%
• Induced Degradation 100%
• Temperature Property 100%
• Deposited Film 33%
• Schottky Barrier 33%
• Absorption Measurement 33%
• Deposition Parameter 33%
• Optoelectronics 33%
• Dangling Bond 33%
• Induced Defect 33%
• Infrared Region 33%
• Deposited Material 33%
• Electrode Structure 33%
• Spin Density 33%

Material Science

• Film 100%
• Amorphous Silicon 100%
• Density 50%
• Annealing 50%
• Schottky Barrier 50%
• Tennessine 50%