Hydrogenated amorphous silicon films prepared at high substrate temperature: Properties and light induced degradation

Ratnabali Banerjee*, Sukriti Ghosh, S. Chattopadhyay, A. K. Bandyopadhyay, P. Chaudhuri, A. K. Batabyal, A. K. Barua

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Of the different deposition parameters, the substrate temperature T s has a profound effect on the microstructure and optoelectronic properties of hydrogenated amorphous silicon (a-Si:H). A detailed study was done to evaluate a-Si:H materials deposited at high substrate temperatures (≥325°C). Their characteristics and nature of light induced degradation were compared to a-Si:H deposited at 200°C. Electrical properties were studied with coplanar electrode structure as well as on Schottky barrier devices. Absorption measurements in the visible and infrared regions and spin-density measurements were carried out. For high Ts (≥325°C) the presence of acceptorlike defects are indicated in addition to the neutral dangling bonds. Annealing recovery from the light soaked state is slower as compared to a film deposited at 200°C. The results have been discussed in connection with the role of hydrogen motion in the annealing of light induced defects.

原文English
頁(從 - 到)7435-7440
頁數6
期刊Journal of Applied Physics
73
發行號11
DOIs
出版狀態Published - 1993

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