摘要
Of the different deposition parameters, the substrate temperature T s has a profound effect on the microstructure and optoelectronic properties of hydrogenated amorphous silicon (a-Si:H). A detailed study was done to evaluate a-Si:H materials deposited at high substrate temperatures (≥325°C). Their characteristics and nature of light induced degradation were compared to a-Si:H deposited at 200°C. Electrical properties were studied with coplanar electrode structure as well as on Schottky barrier devices. Absorption measurements in the visible and infrared regions and spin-density measurements were carried out. For high Ts (≥325°C) the presence of acceptorlike defects are indicated in addition to the neutral dangling bonds. Annealing recovery from the light soaked state is slower as compared to a film deposited at 200°C. The results have been discussed in connection with the role of hydrogen motion in the annealing of light induced defects.
原文 | English |
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頁(從 - 到) | 7435-7440 |
頁數 | 6 |
期刊 | Journal of Applied Physics |
卷 | 73 |
發行號 | 11 |
DOIs | |
出版狀態 | Published - 1993 |