Hydrogenated amorphous silicon films deposited at high growth rates by the cathode heating technique: properties and light induced degradation

Keyphrases

• Heating Process 100%
• Light-induced Degradation 100%
• High Growth Rate 100%
• Hydrogenated Amorphous Silicon Films 100%
• Plasma-enhanced Chemical Vapor Deposition (PECVD) 50%
• RF Power 50%
• Light Soaking 50%
• Silane 50%
• Defect Density 50%
• A-Si 50%
• Hydrogenated Amorphous Silicon 50%
• Power Density 50%
• Optoelectronic Properties 50%
• Power Generation Efficiency 50%
• Hydrogen Dilution 50%
• Film Growth 50%
• Dusty Plasma 50%
• Near-surface Region 50%
• Soaking Time 50%
• Source Gas 50%
• Mobility-lifetime Product 50%

Engineering

• Deposited Film 100%
• Hydrogenated Amorphous Silicon 100%
• Induced Degradation 100%
• High Growth Rate 100%
• Chemical Vapor Deposition 50%
• Vapor Deposition 50%
• Surface Region 50%
• Defect Density 50%
• Source Gas 50%
• Power Density 50%
• Hydrogen Dilution 50%
• Optoelectronics 50%

Material Science

• Film 100%
• Cathode 100%
• Amorphous Silicon 100%
• Surface (Surface Science) 66%
• Density 33%
• Plasma-Enhanced Chemical Vapor Deposition 33%
• Silane 33%
• Defect Density 33%
• Dilution 33%
• Film Growth 33%