TY - GEN
T1 - Hydrogen Iodide (HI) Neutral Beam Etching for InGaN/GaN Micro-LED
AU - Ishihara, Takahiro
AU - Ohori, Daisuke
AU - Wang, Xuelun
AU - Endo, Kazuhiko
AU - Natori, Nobuhiro
AU - Sato, Daisuke
AU - Li, Yi-Ming
AU - Samukawa, Seiji
N1 - Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - InGaN and GaN are adopted for high efficiency, wide color, and low power consumption micro-LED. They require a defect-free and high throughput fabrication. The defect-free fabrication has been already provided by Cl2 neutral beam (NB) etching, on the other hand, the issue of the throughput improving is remained. In this study, we demonstrated high-speed, high accuracy, and high throughput etching adopting hydrogen iodide (HI) NB as new etching gas. For the InGaN, HI NB provided the high etching rate due to the higher volatile etching product of InI3 than InCl3 in case of Cl2 NB. The surface etched by HI did not have any etch residue. Additionally, we found that HI NB could realize no reduction of PL emission intensity because of maintaining the defect-free etching surface. Therefore, HI NB could achieve the high throughput and defect-free etching for InGaNand GaN without any IQE reduction.
AB - InGaN and GaN are adopted for high efficiency, wide color, and low power consumption micro-LED. They require a defect-free and high throughput fabrication. The defect-free fabrication has been already provided by Cl2 neutral beam (NB) etching, on the other hand, the issue of the throughput improving is remained. In this study, we demonstrated high-speed, high accuracy, and high throughput etching adopting hydrogen iodide (HI) NB as new etching gas. For the InGaN, HI NB provided the high etching rate due to the higher volatile etching product of InI3 than InCl3 in case of Cl2 NB. The surface etched by HI did not have any etch residue. Additionally, we found that HI NB could realize no reduction of PL emission intensity because of maintaining the defect-free etching surface. Therefore, HI NB could achieve the high throughput and defect-free etching for InGaNand GaN without any IQE reduction.
UR - http://www.scopus.com/inward/record.url?scp=85142920819&partnerID=8YFLogxK
U2 - 10.1109/NANO54668.2022.9928699
DO - 10.1109/NANO54668.2022.9928699
M3 - Conference contribution
AN - SCOPUS:85142920819
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 48
EP - 51
BT - 2022 IEEE 22nd International Conference on Nanotechnology, NANO 2022
PB - IEEE Computer Society
T2 - 22nd IEEE International Conference on Nanotechnology, NANO 2022
Y2 - 4 July 2022 through 8 July 2022
ER -