Hydrogen instability induced by postannealing on poly-Si TFTs

Chia Chun Liao*, Min Chen Lin, Tien-Sheng Chao

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

This brief investigates hydrogen instability induced by postannealing. Results show that using a SiN capping layer can prevent the release of hydrogen from a polycrystalline-silicon channel. However, removing this SiN capping layer allows the hydrogen release during postannealing, and the resulting device performance becomes comparable to that of the control sample. Hydrogen release reduces the immunity of PBTI and NBTI. Two possible mechanisms can explain the increased preexisting defects associated with hydrogen release, which affects the NBTI and PBTI.

原文English
文章編號6185651
頁(從 - 到)1807-1809
頁數3
期刊IEEE Transactions on Electron Devices
59
發行號6
DOIs
出版狀態Published - 24 4月 2012

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