Hydrogen etching of GaN and its application to produce free-standing GaN thick films

Yen Hsien Yeh*, Kuei Ming Chen, Yin Hao Wu, Ying Chia Hsu, Tzu Yi Yu, Wei-I Lee

*此作品的通信作者

研究成果: Article同行評審

37 引文 斯高帕斯(Scopus)

摘要

This work investigates the morphology of GaN etched in hydrogen (H 2) at different temperatures, the activation energies of the rate-limiting steps of H 2 etching, and the overgrowth on a H 2-etched GaN template. The surfaces of GaN have different profiles after being etched in H 2; they resemble a plane decorated with columns and mooring posts in a low-temperature etching condition, and with deep cavities in a high-temperature etching condition. The etched profiles show that H 2 etching has controllable etching directions: vertical and lateral. In a low-temperature condition, H 2 etching has both vertical and lateral etching directions; however, in a high-temperature condition, it has only the vertical etching direction. The activation energies of the rate-limiting steps under etching pressures of 100 and 700 Torr are estimated to be 3.22 and 3.77 eV, respectively. A thick GaN layer has been grown on a H 2-etched GaN template, and it has self-separated from the underlying sapphire substrate.

原文English
頁(從 - 到)16-19
頁數4
期刊Journal of Crystal Growth
333
發行號1
DOIs
出版狀態Published - 15 11月 2011

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