Hybrid Photosensitive Field Effect Transistor Based on Conjugated Polythiophene and Perovskite Nanocrystal

Gen Wen Hsieh*, Yu Sheng Zhou, Hao Jen Cheng, Wei Syun Hu

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

P-channel solution-processed hybrid field effect transistors based on a blend of conjugated polythiophene and perovskite nanocrystals show a carrier mobility enhancement of more than 166% with respect to that of pristine polythiophene devices. The performed devices under illumination show significant photoresponse and external quantum efficiency. This work may further our understanding on the interaction between polythiophene and perovskite nanostructures.

原文English
主出版物標題30th International Workshop on Active-Matrix Flatpanel Displays and Devices
主出版物子標題TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
頁面136-138
頁數3
ISBN(電子)9784991216947
出版狀態Published - 2023
事件30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Hybrid, Kyoto, 日本
持續時間: 4 7月 20237 7月 2023

出版系列

名字30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings

Conference

Conference30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023
國家/地區日本
城市Hybrid, Kyoto
期間4/07/237/07/23

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