We report the growth over 2 inch sapphire substrates of hybrid nitride-based microcavities using one crack-free highly reflective AlN/GaN distributed Bragg reflectors (DBRs) incorporated with AlN/GaN superlattice (SL) insertion layers and Ta 2 O 5 /SiO 2 DBRs. The optical cavity is formed by a 5λ cavity consisting of n-type GaN, 10 pairs multiple quantum wells and p-type GaN sandwiched by AlN/GaN and Ta 2 O 5 /SiO 2 DBRs. Reflectivity and photoluminescence measurements were carried out on these structures. A 29 periods AlN/GaN DBR incorporated with six AlN/GaN superlattice insertion layers showed no observable cracks and achieved a peak reflectivity of 99.4% and a stopband of 21 nm. Based on these high quality DBRs, the cavity mode is clearly resolved with a linewidth of 2.6 nm. These results demonstrate that the AlN/GaN system is very promising for the achievement of strong light-matter interaction and the fabrication of nitride-based vertical cavity surface emitting lasers.
|頁（從 - 到）||1977-1981|
|期刊||Physica Status Solidi (A) Applications and Materials Science|
|出版狀態||Published - 1 六月 2007|