How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?
Jenn-Fang Chen*, Y. C. Lin, C. H. Chiang, Ross C.C. Chen, Yung-Fu Chen, Y. H. Wu, Li Chang
*此作品的通信作者
研究成果: Article › 同行評審
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引文
斯高帕斯(Scopus)