How do InAs quantum dots relax when the InAs growth thickness exceeds the dislocation-induced critical thickness?

Jenn-Fang Chen*, Y. C. Lin, C. H. Chiang, Ross C.C. Chen, Yung-Fu Chen, Y. H. Wu, Li Chang

*此作品的通信作者

研究成果: Article同行評審

9 引文 斯高帕斯(Scopus)

摘要

A simple critical thickness for generating lattice misfits is insufficient to describe the onset strain relaxation in InAs quantum dots (QDs). A predominant dot family is shown to relieve its strain by In/Ga interdiffusion, rather than by lattice misfits, at the onset of strain relaxation. This argument is based on photoluminescence spectra, which show the emergence of a fine blueshifted transition at the onset of strain relaxation, along with a low-energy transition from a dot family degraded by lattice misfits. From the analysis of the temperature-dependent blueshift and energy separation between the ground and excited-state transitions, the blueshift is attributed to In/Ga interdiffusion. Transmission electron microscopy suggests a relaxation-induced indium migration from the interdiffused dot family to the dislocated dot family. Post-growth thermal annealing can further relieve strain by inducing more In/Ga interdiffusion in the interdiffused dot family and more dislocations in the dislocated dot family. This study explains the co-existence of strong carrier confinement in the QDs and enormous misfit-related traps in the capacitance-voltage spectra, and an elongated QD electron-emission time.

原文English
文章編號013709
頁數7
期刊Journal of Applied Physics
111
發行號1
DOIs
出版狀態Published - 1 一月 2012

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