Hot-Electron Induced Excess Carriers in MOSFET's

S. Tam; F. C. Hsu; P. K. Ko; Chen-Ming Hu; R. S. Muller

doi:10.1109/EDL.1982.25605

Hot-Electron Induced Excess Carriers in MOSFET's

S. Tam, F. C. Hsu, P. K. Ko, Chen-Ming Hu, R. S. Muller

國際半導體產業學院

研究成果: Article › 同行評審

22 引文斯高帕斯（Scopus）

摘要

The existence of minority carriers in the substrate of n-channel MOSFET's operating in the saturation region is shown to be induced by turn-on of the source-substrate junction and photon generation. The two mechanisms are demonstrated experimentally and the photon-generation mechanism is further illustrated on a p-well CMOS wafer. Photon generation poses a constraint in VLSI dynamic RAM design.

原文	English
頁（從 - 到）	376-378
頁數	3
期刊	IEEE Electron Device Letters
卷	3
發行號	12
DOIs	https://doi.org/10.1109/EDL.1982.25605
出版狀態	Published - 1 1月 1982

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10.1109/EDL.1982.25605

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Hot-Electron Induced Excess Carriers in MOSFET's

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