Hot-electron-induced electron trapping in 0.13 μm nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide

Ching Wei Chen*, Chao-Hsin Chien, Tsu Hsiu Perng, Chun Yen Chang

*此作品的通信作者

    研究成果: Article同行評審

    指紋

    深入研究「Hot-electron-induced electron trapping in 0.13 μm nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxide」主題。共同形成了獨特的指紋。

    Engineering & Materials Science

    Physics & Astronomy

    Chemical Compounds