HOT CARRIERS INDUCED DEGRADATION IN THIN GATE OXIDE MOSFETs.

M. S. Liang^*, C. Chang, W. Yang, Chen-Ming Hu, R. W. Brodersen

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研究成果: Conference article › 同行評審

21 引文斯高帕斯（Scopus）

原文	English
頁（從 - 到）	186-189
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1983.190472
出版狀態	Published - 1 12月 1983

存取文件

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title = "HOT CARRIERS INDUCED DEGRADATION IN THIN GATE OXIDE MOSFETs.",

author = "Liang, {M. S.} and C. Chang and W. Yang and Chen-Ming Hu and Brodersen, {R. W.}",

year = "1983",

month = dec,

day = "1",

doi = "10.1109/IEDM.1983.190472",

language = "English",

pages = "186--189",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - HOT CARRIERS INDUCED DEGRADATION IN THIN GATE OXIDE MOSFETs.

AU - Liang, M. S.

AU - Chang, C.

AU - Yang, W.

AU - Hu, Chen-Ming

AU - Brodersen, R. W.

PY - 1983/12/1

Y1 - 1983/12/1

UR - http://www.scopus.com/inward/record.url?scp=0020938449&partnerID=8YFLogxK

U2 - 10.1109/IEDM.1983.190472

DO - 10.1109/IEDM.1983.190472

M3 - Conference article

AN - SCOPUS:0020938449

SP - 186

EP - 189

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -