The electric characteristics of nitrided gate oxide n- and p-MOSFETs were investigated. In particular, hot carrier induced degradation was studied in detail. It was confirmed that the nitrided gate oxide samples are resistive to interface state generation for both the n- and p-MOSFET cases. However, the hot electron trapping of the nitrided p-MOSFET was found to be larger than that of a pure gate oxide device. Relations between the degradations and substrate and gate currents were investigated. Other characteristics, such as mobility and the snap-back phenomenon, were also compared between the nitrided and pure oxide devices. It was found that nitrided gate oxide n-MOSFET mobilities are improved under high gate bias. On the other hand, nitrided oxide p-MOSFET mobilities are degraded. The snap-back breakdown voltages of the nitrided oxide devices were found to be improved for both n- and p-channel cases.
|頁（從 - 到）||267-270|
|期刊||Technical Digest - International Electron Devices Meeting|
|出版狀態||Published - 1989|
|事件||1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA|
持續時間: 3 12月 1989 → 6 12月 1989