TY - JOUR
T1 - Hot carrier related phenomena for n- and p-MOSFETs with nitrided gate oxide by RTP
AU - Momose, Hisayo Sasaki
AU - Kitagawa, Satoshi
AU - Yamabe, Kikuo
AU - Iwai, Hiroshi
PY - 1989
Y1 - 1989
N2 - The electric characteristics of nitrided gate oxide n- and p-MOSFETs were investigated. In particular, hot carrier induced degradation was studied in detail. It was confirmed that the nitrided gate oxide samples are resistive to interface state generation for both the n- and p-MOSFET cases. However, the hot electron trapping of the nitrided p-MOSFET was found to be larger than that of a pure gate oxide device. Relations between the degradations and substrate and gate currents were investigated. Other characteristics, such as mobility and the snap-back phenomenon, were also compared between the nitrided and pure oxide devices. It was found that nitrided gate oxide n-MOSFET mobilities are improved under high gate bias. On the other hand, nitrided oxide p-MOSFET mobilities are degraded. The snap-back breakdown voltages of the nitrided oxide devices were found to be improved for both n- and p-channel cases.
AB - The electric characteristics of nitrided gate oxide n- and p-MOSFETs were investigated. In particular, hot carrier induced degradation was studied in detail. It was confirmed that the nitrided gate oxide samples are resistive to interface state generation for both the n- and p-MOSFET cases. However, the hot electron trapping of the nitrided p-MOSFET was found to be larger than that of a pure gate oxide device. Relations between the degradations and substrate and gate currents were investigated. Other characteristics, such as mobility and the snap-back phenomenon, were also compared between the nitrided and pure oxide devices. It was found that nitrided gate oxide n-MOSFET mobilities are improved under high gate bias. On the other hand, nitrided oxide p-MOSFET mobilities are degraded. The snap-back breakdown voltages of the nitrided oxide devices were found to be improved for both n- and p-channel cases.
UR - http://www.scopus.com/inward/record.url?scp=0024895489&partnerID=8YFLogxK
U2 - 10.1109/IEDM.1989.74276
DO - 10.1109/IEDM.1989.74276
M3 - Conference article
AN - SCOPUS:0024895489
SP - 267
EP - 270
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
Y2 - 3 December 1989 through 6 December 1989
ER -