Hot Carrier Injection Reliability of Fabricated N- and P-Type Multi FinFETs with Different TiN Stacks

Yu Lin Chen*, Wen-Kuan Yeh, Heng Tung Hsu, Ke Horng Chen, Wen Chin Lin, Tien Han Yu, Hung Ting Chou, D. Godwin Raj, D. Godfrey

*此作品的通信作者

研究成果: Article同行評審

摘要

Device degradation due to hot carrier injection (HCI) in multi-fin 20 nm and 10 nm N- and P-type FinFET devices are thoroughly analyzed. To further understand the HCI reliability of the four FinFET devices, the device is fabricated with a standard Vt base and low Vt base gate stacks with different work functions. It is evident that: (i) The standard Vt device sustains lower effective stress bias due to the difference in threshold voltage, resulting in a more stable threshold voltage than the low Vt base device, and (ii) the transconductance of the single N- and P-type FinFET is more severely degraded than the multi-fin N- and P-type FinFET, mainly because multi N- and P-type Finfet has coupe effect, which effectively reduces the impact of HCI.

原文English
文章編號035007
期刊ECS Journal of Solid State Science and Technology
12
發行號3
DOIs
出版狀態Published - 3月 2023

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