摘要
Device degradation due to hot carrier injection (HCI) in multi-fin 20 nm and 10 nm N- and P-type FinFET devices are thoroughly analyzed. To further understand the HCI reliability of the four FinFET devices, the device is fabricated with a standard Vt base and low Vt base gate stacks with different work functions. It is evident that: (i) The standard Vt device sustains lower effective stress bias due to the difference in threshold voltage, resulting in a more stable threshold voltage than the low Vt base device, and (ii) the transconductance of the single N- and P-type FinFET is more severely degraded than the multi-fin N- and P-type FinFET, mainly because multi N- and P-type Finfet has coupe effect, which effectively reduces the impact of HCI.
原文 | English |
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文章編號 | 035007 |
期刊 | ECS Journal of Solid State Science and Technology |
卷 | 12 |
發行號 | 3 |
DOIs | |
出版狀態 | Published - 3月 2023 |