Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length

Yu Lin Chen, Wen-Kuan Yeh, Ke Horng Chen, Heng Tung Hsu, Chin Tsai Hsu, D. Godwin Raj, Hung Ting Chou, Jui Sheng Wu, Tien Han Yu, D. Godfrey

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Device degradation due to hot carrier injection (HCI) in different Y-gate HEMT devices is thoroughly analyzed. To further understand the HCI reliability of the Y-gate HEMT devices, the device is fabricated with AlGaN/GaN structure with different top lengths (Ltop). An HCI stress time of 6000 s was conducted on these devices, while V t stability in other stress time domains, leakage current, and transconductance degradation are also discussed. In this work, we have demonstrated that increasing the LTop length could avoid the virtual gate effect and disperse the influence of the electric field under HCI stress. Furthermore, the effects of trapping in various locations, such as in the bulk SiN or AlGaN/GaN interface has been discussed. These trapping effects caused by the HCI stress might be the source of the Vth shift. Overall, The large Y-gate HEMT showed the lowest degradation of DC characteristics after the long HCI stress test.

原文English
文章編號035001
期刊ECS Journal of Solid State Science and Technology
12
發行號3
DOIs
出版狀態Published - 3月 2023

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