Hot-carrier effects in depletion-mode MOSFETs

T. C. Ong*, P. K. Ko, Chen-Ming Hu

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

Under the same gate and drain bias, the substrate current in a depletion-mode MOSFET is smaller than in an enhancement-mode MOSFET. The difference, however, is gate bias dependent, being larger at low gate voltages and smaller at high gate bias. The phenomenon can be understood in terms of an effective gate-oxide thickness concept. Other hot-carrier effects in the depletion-mode MOSFET, such as gate current and hot-carrier-induced breakdown, can also be understood on the same basis. On the other hand, hole injection into the oxide at very low VG is larger in a depletion-mode device. Such large hole injection leads to a more negative Vt after stressing. The maximum shift in Vt (negative ΔVt) is comparable to that in an enhancement-mode device.

原文English
頁(從 - 到)33-36
頁數4
期刊Solid State Electronics
32
發行號1
DOIs
出版狀態Published - 1 1月 1989

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