Hot carrier degradation in LDMOS power transistors

Chih Chang Cheng*, J. W. Wu, C. C. Lee, J. H. Shao, Ta-Hui Wang

*此作品的通信作者

    研究成果: Paper同行評審

    13 引文 斯高帕斯(Scopus)

    摘要

    The hot carrier performance of N-LDMOS and P-LDMOS transistors is evaluated. For N-LDMOS transistors, the drain current degradation is shown to be due to hot electron injection in the drift region field oxide (bird's beak edge). On the other hand, the hot carrier-damaged region of P-LDMOS transistors is within the channel region, and hot electron is also the source of degradation.

    原文English
    頁面283-286
    頁數4
    DOIs
    出版狀態Published - 2004
    事件Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
    持續時間: 5 7月 20048 7月 2004

    Conference

    ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
    國家/地區Taiwan
    期間5/07/048/07/04

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