摘要
The hot carrier performance of N-LDMOS and P-LDMOS transistors is evaluated. For N-LDMOS transistors, the drain current degradation is shown to be due to hot electron injection in the drift region field oxide (bird's beak edge). On the other hand, the hot carrier-damaged region of P-LDMOS transistors is within the channel region, and hot electron is also the source of degradation.
原文 | English |
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頁面 | 283-286 |
頁數 | 4 |
DOIs | |
出版狀態 | Published - 2004 |
事件 | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , 台灣 持續時間: 5 7月 2004 → 8 7月 2004 |
Conference
Conference | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 |
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國家/地區 | 台灣 |
期間 | 5/07/04 → 8/07/04 |