Hopping transport of electrons via Si-Dot

Hiroshi Watanabe

doi:10.1007/978-3-211-72861-1_59

Hopping transport of electrons via Si-Dot

Hiroshi Watanabe^*

^*此作品的通信作者

電機工程學系

研究成果 › 同行評審

4 引文斯高帕斯（Scopus）

摘要

We clarify the mechanism of single electron hopping and demonstrate single electron ocsillation via Si-dot, using a high-presice general-puprpuse device-simulator.

原文	English
頁面	249-252
頁數	4
DOIs	https://doi.org/10.1007/978-3-211-72861-1_59
出版狀態	Published - 9月 2007
事件	12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, 奧地利持續時間: 25 9月 2007 → 27 9月 2007

Conference

Conference	12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
國家/地區	奧地利
城市	Vienna
期間	25/09/07 → 27/09/07

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10.1007/978-3-211-72861-1_59

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Link to publication in Scopus

引用此

@conference{e63032af7f6849ad8b1f0f4cdec38bdc,

title = "Hopping transport of electrons via Si-Dot",

abstract = "We clarify the mechanism of single electron hopping and demonstrate single electron ocsillation via Si-dot, using a high-presice general-puprpuse device-simulator.",

author = "Hiroshi Watanabe",

year = "2007",

month = sep,

doi = "10.1007/978-3-211-72861-1_59",

language = "English",

pages = "249--252",

note = "12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 ; Conference date: 25-09-2007 Through 27-09-2007",

}

TY - CONF

T1 - Hopping transport of electrons via Si-Dot

AU - Watanabe, Hiroshi

PY - 2007/9

Y1 - 2007/9

N2 - We clarify the mechanism of single electron hopping and demonstrate single electron ocsillation via Si-dot, using a high-presice general-puprpuse device-simulator.

AB - We clarify the mechanism of single electron hopping and demonstrate single electron ocsillation via Si-dot, using a high-presice general-puprpuse device-simulator.

UR - http://www.scopus.com/inward/record.url?scp=74349102614&partnerID=8YFLogxK

U2 - 10.1007/978-3-211-72861-1_59

DO - 10.1007/978-3-211-72861-1_59

M3 - Paper

AN - SCOPUS:74349102614

SP - 249

EP - 252

T2 - 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

Y2 - 25 September 2007 through 27 September 2007

ER -

Hopping transport of electrons via Si-Dot

摘要

Conference

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