Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory

Chung Wei Hsu, Yu Fen Wang, Chia Chen Wan, I. Ting Wang, Chun Tse Chou, Wei Li Lai, Yao Jen Lee, Tuo-Hung Hou

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    62 引文 斯高帕斯(Scopus)

    摘要

    Three-dimensional vertical resistive-switching random access memory (V-RRAM) is the most anticipated candidate for fulfilling the strict requirements of the disruptive storage-class memory technology, including low bit cost, fast access time, low-power nonvolatile storage, and excellent endurance. However, an essential self-selecting resistive-switching cell that satisfies these requirements has yet to be developed. In this study, we developed a TaOx/TiO2 double-layer V-RRAM containing numerous highly desired features, including: (1) a self-rectifying ratio of up to 103 with a sub-μA operating current, (2) little cycle-to-cycle and layer-to-layer variation, (3) a steep vertical sidewall profile for high-density integration, (4) forming-free and self-compliance characteristics for a simple peripheral circuit design, and (5) an extrapolated endurance of over 1015 cycles at 100 °C. Furthermore, the switching and self-rectifying mechanisms were successfully modeled using oxygen ion migration and homogeneous barrier modulation. We also suggest the new possibility of monolithically integrating working and storage memory by exploiting a unique tradeoff between retention time and endurance.

    原文English
    文章編號165202
    頁(從 - 到)1-7
    頁數7
    期刊Nanotechnology
    25
    發行號16
    DOIs
    出版狀態Published - 25 4月 2014

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