Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

C. H. Wang*, S. P. Chang, P. H. Ku, J. C. Li, Yu-Pin Lan, Chien-Chung Lin, H. C. Yang, Hao-Chung Kuo, Tien-chang Lu, S. C. Wang, C. Y. Chang

*此作品的通信作者

研究成果: Article同行評審

135 引文 斯高帕斯(Scopus)

摘要

Graded-composition multiple quantum barriers (GQB) were designed and incorporated in c-plane InGaN/GaN light-emitting diodes (LEDs) grown on c-plane sapphire substrate to improve hole transport and efficiency droop. The simulation of GQB LED design predicts enhancement of the hole transport in the active region at both low and high current densities. The fabricated LED with GQB structure exhibits lower series resistance and substantially reduced droop behavior of only 6 in comparison with 34 for conventional LED, supporting the improvement of hole transport in our design.

原文English
文章編號171106
頁(從 - 到)1-3
頁數3
期刊Applied Physics Letters
99
發行號17
DOIs
出版狀態Published - 24 10月 2011

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