摘要
The work reports a theoretical and experimental study on the device performance of near ultraviolet light-emitting diodes (LEDs) with specific design on the electron blocking layer (EBL) by employing the band-engineering. The simulation results show the polarization-induced downward band bending is mitigated in the specific EBL design and, hence, the capability of hole transportation increases and the behavior of electron overflow decreases. The experimental results show the LEDs with specific EBL design exhibited a reduction of forward voltage from 4.40 to 4.07 V and a much enhancement of light output power from 30.6 to 51.9mW, compared with conventional LED.
原文 | English |
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文章編號 | 08JK05 |
期刊 | Japanese Journal of Applied Physics |
卷 | 52 |
發行號 | 8 PART 2 |
DOIs | |
出版狀態 | Published - 8月 2013 |