Hole g-factor anisotropies in individual InAs quantum rings

R. Kaji, T. Tominaga, Y. N. Wu, M. F. Wu, Shun-Jen Cheng, S. Adachi

研究成果: Conference contribution同行評審

摘要

We investigated the electron and hole g-factors in individual InAs/GaAs quantum rings (QRs). From the magneto-photoluminescence measurements under a transverse magnetic field, we evaluated the in-plane g-factors of electron and hole spins by rotating the sample systematically around the crystal growth axis. The experimental results indicate that the in-plane and the out-of-plane anisotropies in hole g-factor are larger than those of electron g-factor, and the value of the hole in-plane g-factor varies largely from QR to QR while the electron g-factor is almost a constant value. From the model calculation considering the effects of shape anisotropies and uniaxial stress, we examined the correlation between the in-plane g-factors and the degree of valence band mixing. Further, the experimentally obtained trend in g-factors was in agreement qualitatively with theoretical consideration.

原文English
主出版物標題2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781509019649
DOIs
出版狀態Published - 1 8月 2016
事件2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
持續時間: 26 6月 201630 6月 2016

出版系列

名字2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Conference

Conference2016 Compound Semiconductor Week, CSW 2016
國家/地區Japan
城市Toyama
期間26/06/1630/06/16

指紋

深入研究「Hole g-factor anisotropies in individual InAs quantum rings」主題。共同形成了獨特的指紋。

引用此