History dependence of output characteristics of silicon-on-insulator (SOI) MOSFET's

K. A. Jenkins*, J. Y.C. Sun, J. Gautier

*此作品的通信作者

研究成果: Review article同行評審

10 引文 斯高帕斯(Scopus)

摘要

It is demonstrated that the drain current overshoot in partially depleted SOI MOSFET's has a significant history dependence or memory effect, even in the absence of impact ionization under low drain biases. The measured output characteristics of partially depleted SOI MOSFET's are shown to be dynamically dependent on their switching history, frequency, and bias conditions due to the finite time constants of carrier generation (thermal or impact ionization) and recombination in the floating body.

原文English
頁(從 - 到)7-9
頁數3
期刊Ieee Electron Device Letters
17
發行號1
DOIs
出版狀態Published - 1月 1996

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