@article{609093dfc64b4b1a8b766fb51b5f4d57,
title = "Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers",
abstract = "We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.",
keywords = "Highly strained, InGaAs, VCSEL",
author = "Yang, {Hung Pin D.} and Chen, {I. Liang} and Lee, {Chen Hong} and Chiou, {Chih Hong} and Lee, {Tsin Dong} and Hsu, {I. Chen} and Lai, {Fang I.} and Kuo-Jui Lin and Hao-Chung Kuo and Chi, {Jim Y.}",
year = "2007",
month = may,
day = "25",
doi = "10.1143/JJAP.46.L509",
language = "English",
volume = "46",
pages = "L509--L511",
journal = "Japanese Journal of Applied Physics, Part 2: Letters",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "21",
}