Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers

Hung Pin D. Yang*, I. Liang Chen, Chen Hong Lee, Chih Hong Chiou, Tsin Dong Lee, I. Chen Hsu, Fang I. Lai, Kuo-Jui Lin, Hao-Chung Kuo, Jim Y. Chi

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.

原文English
頁(從 - 到)L509-L511
頁數3
期刊Japanese Journal of Applied Physics, Part 2: Letters
46
發行號21
DOIs
出版狀態Published - 25 5月 2007

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