Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

S. J. Chang*, Hsin-Chieh Yu, Y. K. Su, I. L. Chen, T. D. Lee, C. M. Lu, C. H. Chiou, Z. H. Lee, H. P. Yang, C. P. Sung

*此作品的通信作者

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance.

原文English
頁(從 - 到)60-63
頁數4
期刊Materials Science and Engineering B: Solid-State Materials for Advanced Technology
121
發行號1-2
DOIs
出版狀態Published - 25 7月 2005

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