Highly Strained 1: 22-μM Ingaas Lasers Grown By Movpe

W. C. Chen, Y. K. Su, R. W. Chuang, Hsin-Chieh Yu, M. C. Tsai, K. Y. Cheng, J. B. Horng, C. Hu, Seth Tsau

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.

原文English
頁(從 - 到)264-266
頁數3
期刊IEEE Photonics Technology Letters
20
發行號4
DOIs
出版狀態Published - 15 2月 2008

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