摘要
In this work, the highly strained In0.39 Ga0. 61As-GaAs lasers grown by metal-organic vapor phase epitaxy were studied. The InGaAs lasers could emit at 1.22 μm under continuous-wave conditions, whereas the threshold current density (Jth) and transparency current density (Jtr) were 140 and 37.2 A/cm2, respectively. To the best of our knowledge, the Jtr was the lowest among the reported InGaAs lasers longer than 1.2 μm. The characteristic temperature (T0) was 146.2 K indicating the good temperature stability. These excellent laser characteristics could be attributed to the optimized growth conditions.
原文 | English |
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頁(從 - 到) | 264-266 |
頁數 | 3 |
期刊 | IEEE Photonics Technology Letters |
卷 | 20 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 15 2月 2008 |