Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor

Ke Hua Su, Wei Chou Hsu*, Ching Sung Lee, Po Jung Hu, Ru Shang Hsiao, Jenn-Fang Chen, Tung Wei Chi

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

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Physics & Astronomy

Engineering & Materials Science