Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor
Ke Hua Su, Wei Chou Hsu*, Ching Sung Lee, Po Jung Hu, Ru Shang Hsiao, Jenn-Fang Chen, Tung Wei Chi
*此作品的通信作者
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斯高帕斯（Scopus）