Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor

Ke Hua Su; Wei Chou Hsu; Ching Sung Lee; Po Jung Hu; Ru Shang Hsiao; Jenn-Fang Chen; Tung Wei Chi

doi:10.1143/JJAP.46.2344

Highly stable thermal characteristics of a novel in_0.3Ga _0.7As_0.99N_0.01(Sb)/GaAs high-electron-mobility transistor

Ke Hua Su, Wei Chou Hsu^*, Ching Sung Lee, Po Jung Hu, Ru Shang Hsiao, Jenn-Fang Chen, Tung Wei Chi

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A novel In_0.3Ga_0.7As_0.99N _0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V _th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In_0.3 Ga_0.7As_0.99N_0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (g_m,max) of 94 (109)mS/mm at 450 (300)K.

原文	English
頁（從 - 到）	2344-2347
頁數	4
期刊	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
卷	46
發行號	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2344
出版狀態	Published - 24 4月 2007

存取文件

10.1143/JJAP.46.2344

其它文件與鏈接

Link to publication in Scopus

引用此

@article{3a462394e7b749c6bb6296f9f501f315,

title = "Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor",

abstract = "A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.",

keywords = "Dilute channel, InGaAsNSb/GaAs HEMT, Surfactant",

author = "Su, \{Ke Hua\} and Hsu, \{Wei Chou\} and Lee, \{Ching Sung\} and Hu, \{Po Jung\} and Hsiao, \{Ru Shang\} and Jenn-Fang Chen and Chi, \{Tung Wei\}",

year = "2007",

month = apr,

day = "24",

doi = "10.1143/JJAP.46.2344",

language = "English",

volume = "46",

pages = "2344--2347",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "4 B",

}

TY - JOUR

T1 - Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor

AU - Su, Ke Hua

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Hu, Po Jung

AU - Hsiao, Ru Shang

AU - Chen, Jenn-Fang

AU - Chi, Tung Wei

PY - 2007/4/24

Y1 - 2007/4/24

N2 - A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.

AB - A novel In0.3Ga0.7As0.99N 0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (∂V th∂T) of -0.807 mV/K and a high-temperature linearity (∂GVS/∂T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3 Ga0.7As0.99N0.01 (Sb)GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (gm,max) of 94 (109)mS/mm at 450 (300)K.

KW - Dilute channel

KW - InGaAsNSb/GaAs HEMT

KW - Surfactant

UR - https://www.scopus.com/pages/publications/34547860107

U2 - 10.1143/JJAP.46.2344

DO - 10.1143/JJAP.46.2344

M3 - Article

AN - SCOPUS:34547860107

SN - 0021-4922

VL - 46

SP - 2344

EP - 2347

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 B

ER -

Highly stable thermal characteristics of a novel in0.3Ga 0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor

摘要

存取文件

其它文件與鏈接

指紋

引用此

Highly stable thermal characteristics of a novel in_0.3Ga _0.7As_0.99N_0.01(Sb)/GaAs high-electron-mobility transistor