Highly Stable Short Channel Ultrathin Atomic Layer Deposited Indium Zinc Oxide Thin Film Transistors with Excellent Electrical Characteristics

Yan Kui Liang, Wei Li Li, Jun Yang Zheng, Yu Lon Lin, Yu Cheng Lu, Ching Hua Chiu, Dong Ru Hsieh, Tsung Te Chou, Chi Chung Kei, Huai Ying Huang, Yu Ming Lin, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Chun Hsiung Lin

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

The high-performance atomic layer deposited (ALD) ultrathin (~2 nm) amorphous InZnO (α-IZO, indium: Zinc ≈ 6:4) channel thin-film transistors (TFTs) with a short channel length (Lch) of 50 nm were presented. Furthermore, the gate stability was evaluated using temperature-dependent positive-bias stress (PBS) tests for the IZO TFTs up to 3.5 MV/cm. The short channel TFTs exhibited excellent electrical characteristics, with high Ion exceeding 360 uA/um (@VG= 2V), and an optimized threshold voltage (Vth) of ~ 0.11 V. In particular, the ultra-low drain-induced barrier lowering (DIBL) performance of 16 mV/V was presented and matched with technology computer aided design (TCAD) estimation. The activation energy of device degradation was extracted to better understand the mechanism. The extracted high field effect channel mobility (μFE) of 43.6 cm2/V-s in conjunction with the low Vth shifts of 12.4 mV (@ 3.5 MV/cm; Vth+2V) for 5000s PBS test at 25 °C exhibited the excellent performances combining channel mobility and gate stability reported for oxide semiconductor TFT.

原文English
頁(從 - 到)1
頁數1
期刊Ieee Electron Device Letters
DOIs
出版狀態Accepted/In press - 2023

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