Highly scaled equivalent oxide thickness of 0.66nm for TiN/HfO₂/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition

Through in situ hydrogen plasma treatment (HPT) and plasma-enhanced atomic-layer-deposited TiN (PEALD-TiN) layer capping, we successfully fabricated TiN/HfO₂/GaSb metal-oxide-semiconductor capacitors with an ultrathin equivalent oxide thickness of 0.66nm and a low density of states of approximately 2 × 10¹²cm^-2 eV^-1 near the valence band edge. After in situ HPT, a native oxide-free surface was obtained through efficient etching. Moreover, the use of the in situ PEALD-TiN layer precluded high-κ dielectric damage that would have been caused by conventional sputtering, thereby yielding a superior high-κ dielectric and low gate leakage current.