Highly scaled equivalent oxide thickness of 0.66nm for TiN/HfO2/GaSb MOS capacitors by using plasma-enhanced atomic layer deposition

Ming Li Tsai, Shin Yuan Wang, Chao-Hsin Chien

    研究成果: Article同行評審

    2 引文 斯高帕斯(Scopus)

    摘要

    Through in situ hydrogen plasma treatment (HPT) and plasma-enhanced atomic-layer-deposited TiN (PEALD-TiN) layer capping, we successfully fabricated TiN/HfO2/GaSb metal-oxide-semiconductor capacitors with an ultrathin equivalent oxide thickness of 0.66nm and a low density of states of approximately 2 × 1012cm-2 eV-1 near the valence band edge. After in situ HPT, a native oxide-free surface was obtained through efficient etching. Moreover, the use of the in situ PEALD-TiN layer precluded high-κ dielectric damage that would have been caused by conventional sputtering, thereby yielding a superior high-κ dielectric and low gate leakage current.

    原文English
    文章編號086501
    期刊Applied Physics Express
    10
    發行號8
    DOIs
    出版狀態Published - 1 八月 2017

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