Highly Responsive Blue Light Sensor with Amorphous Indium-Zinc-Oxide Thin-Film Transistor based Architecture

Po-Tsun Liu*, Dun Bao Ruan, Xiu Yun Yeh, Yu Chuan Chiu, Guang Ting Zheng, Simon M. Sze

*此作品的通信作者

研究成果: Article同行評審

29 引文 斯高帕斯(Scopus)

摘要

A single layer of amorphous InZnO is chosen as the channel material for a thin film transistor (TFT)-based driver and sensing layer for a blue-light sensor, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1280 A/W) and excellent signal to noise ratio (sim;105) under the blue light illumination. Afterwards, the detail studies and important issues about the sensing and material characteristics of a-IZO thin film in the TFT sensor are well discussed. The results suggest that the numbers of the deep, neutral oxygen vacancy are the key factors for carrier generation under illumination. In addition, a positive gate pulse is applied on the devices to eliminate persistent photoconductivity in order to ensure the recover ability for the photo sensor application. The practical concepts of a sensor circuit, which can be integrated on RGB pixel with interactive display, are also proposed on the basis of photo sensor TFT.

原文English
文章編號8153
期刊Scientific reports
8
發行號1
DOIs
出版狀態Published - 1 12月 2018

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