Highly Reliable, Scalable, and High-Yield HfZrOxFRAM by Barrier Layer Engineering and Post-Metal Annealing

Yu De Lin*, Po Chun Yeh, Jheng Yang Dai, Jian Wei Su, Hsin Hui Huang, Chen Yi Cho, Ying Tsan Tang, Tuo Hung Hou, Shyh Shyuan Sheu, Wei Chung Lo, Shih Chieh Chang

*此作品的通信作者

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.

原文English
主出版物標題2022 International Electron Devices Meeting, IEDM 2022
發行者Institute of Electrical and Electronics Engineers Inc.
頁面3211-3214
頁數4
ISBN(電子)9781665489591
DOIs
出版狀態Published - 2022
事件2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, United States
持續時間: 3 12月 20227 12月 2022

出版系列

名字Technical Digest - International Electron Devices Meeting, IEDM
2022-December
ISSN(列印)0163-1918

Conference

Conference2022 International Electron Devices Meeting, IEDM 2022
國家/地區United States
城市San Francisco
期間3/12/227/12/22

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