Highly Reliable, Scalable, and High-Yield HfZrOxFRAM by Barrier Layer Engineering and Post-Metal Annealing

Yu De Lin; Po Chun Yeh; Jheng Yang Dai; Jian Wei Su; Hsin Hui Huang; Chen Yi Cho; Ying Tsan Tang; Tuo Hung Hou; Shyh Shyuan Sheu; Wei Chung Lo; Shih Chieh Chang

doi:10.1109/IEDM45625.2022.10019561

Highly Reliable, Scalable, and High-Yield HfZrO_xFRAM by Barrier Layer Engineering and Post-Metal Annealing

Yu De Lin^*, Po Chun Yeh, Jheng Yang Dai, Jian Wei Su, Hsin Hui Huang, Chen Yi Cho, Ying Tsan Tang, Tuo Hung Hou, Shyh Shyuan Sheu, Wei Chung Lo, Shih Chieh Chang

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

6 引文斯高帕斯（Scopus）

摘要

A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.

原文	English
主出版物標題	2022 International Electron Devices Meeting, IEDM 2022
發行者	Institute of Electrical and Electronics Engineers Inc.
頁面	3211-3214
頁數	4
ISBN（電子）	9781665489591
DOIs	https://doi.org/10.1109/IEDM45625.2022.10019561
出版狀態	Published - 2022
事件	2022 International Electron Devices Meeting, IEDM 2022 - San Francisco, 美國持續時間: 3 12月 2022 → 7 12月 2022

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
卷	2022-December
ISSN（列印）	0163-1918

Conference

Conference	2022 International Electron Devices Meeting, IEDM 2022
國家/地區	美國
城市	San Francisco
期間	3/12/22 → 7/12/22

存取文件

10.1109/IEDM45625.2022.10019561

其它文件與鏈接

Link to publication in Scopus

引用此

Lin, Y. D., Yeh, P. C., Dai, J. Y., Su, J. W., Huang, H. H., Cho, C. Y., Tang, Y. T., Hou, T. H., Sheu, S. S., Lo, W. C., & Chang, S. C. (2022). Highly Reliable, Scalable, and High-Yield HfZrO_xFRAM by Barrier Layer Engineering and Post-Metal Annealing. 於 2022 International Electron Devices Meeting, IEDM 2022 (頁 3211-3214). (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2022-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM45625.2022.10019561

@inproceedings{c7ca8306b6b0418db4bf288f11180d91,

title = "Highly Reliable, Scalable, and High-Yield HfZrOxFRAM by Barrier Layer Engineering and Post-Metal Annealing",

abstract = "A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.",

author = "Lin, {Yu De} and Yeh, {Po Chun} and Dai, {Jheng Yang} and Su, {Jian Wei} and Huang, {Hsin Hui} and Cho, {Chen Yi} and Tang, {Ying Tsan} and Hou, {Tuo Hung} and Sheu, {Shyh Shyuan} and Lo, {Wei Chung} and Chang, {Shih Chieh}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Electron Devices Meeting, IEDM 2022 ; Conference date: 03-12-2022 Through 07-12-2022",

year = "2022",

doi = "10.1109/IEDM45625.2022.10019561",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "3211--3214",

booktitle = "2022 International Electron Devices Meeting, IEDM 2022",

address = "美國",

}

Lin, YD, Yeh, PC, Dai, JY, Su, JW, Huang, HH, Cho, CY, Tang, YT, Hou, TH, Sheu, SS, Lo, WC & Chang, SC 2022, Highly Reliable, Scalable, and High-Yield HfZrO_xFRAM by Barrier Layer Engineering and Post-Metal Annealing. 於 2022 International Electron Devices Meeting, IEDM 2022. Technical Digest - International Electron Devices Meeting, IEDM, 卷 2022-December, Institute of Electrical and Electronics Engineers Inc., 頁 3211-3214, 2022 International Electron Devices Meeting, IEDM 2022, San Francisco, 美國, 3/12/22. https://doi.org/10.1109/IEDM45625.2022.10019561

Highly Reliable, Scalable, and High-Yield HfZrO_xFRAM by Barrier Layer Engineering and Post-Metal Annealing. / Lin, Yu De; Yeh, Po Chun; Dai, Jheng Yang 等.
2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 3211-3214 (Technical Digest - International Electron Devices Meeting, IEDM; 卷 2022-December).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - Highly Reliable, Scalable, and High-Yield HfZrOxFRAM by Barrier Layer Engineering and Post-Metal Annealing

AU - Lin, Yu De

AU - Yeh, Po Chun

AU - Dai, Jheng Yang

AU - Su, Jian Wei

AU - Huang, Hsin Hui

AU - Cho, Chen Yi

AU - Tang, Ying Tsan

AU - Hou, Tuo Hung

AU - Sheu, Shyh Shyuan

AU - Lo, Wei Chung

AU - Chang, Shih Chieh

PY - 2022

Y1 - 2022

N2 - A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.

AB - A highly reliable HfZrOx FRAM technology showing endurance up to 10 {12} cycles and 10 {10} cycles at 27°C and 120°C, respectively, in a scaled cell area of 0.36 mu mathrm{m}{2} has been demonstrated. The improved endurance is accomplished through barrier layer engineering of inserting TiON and 400°C post-metal annealing. Furthermore, wake-up-free 4 Kb 1T1C FRAM test chips show an extremely high initial yield of >98% across a wafer. The robust high-temperature reliability and high-yield array demonstrate high promise for future applications in automobile electronics.

UR - http://www.scopus.com/inward/record.url?scp=85147500092&partnerID=8YFLogxK

U2 - 10.1109/IEDM45625.2022.10019561

DO - 10.1109/IEDM45625.2022.10019561

M3 - Conference contribution

AN - SCOPUS:85147500092

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 3211

EP - 3214

BT - 2022 International Electron Devices Meeting, IEDM 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 International Electron Devices Meeting, IEDM 2022

Y2 - 3 December 2022 through 7 December 2022

ER -

Lin YD, Yeh PC, Dai JY, Su JW, Huang HH, Cho CY 等. Highly Reliable, Scalable, and High-Yield HfZrO_xFRAM by Barrier Layer Engineering and Post-Metal Annealing. 於 2022 International Electron Devices Meeting, IEDM 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 3211-3214. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM45625.2022.10019561