Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory

Woei Cherng Wu; Tien-Sheng Chao; Wu Chin Peng; Wen Luh Yang; Jer Chyi Wang; Jian Hao Chen; Chao Sung Lai; Tsung Yu Yang; Chien Hsing Lee; Tsung Min Hsieh; Jhyy Cheng Liou

doi:10.1109/LED.2007.891301

Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory

Woei Cherng Wu, Tien-Sheng Chao, Wu Chin Peng, Wen Luh Yang, Jer Chyi Wang, Jian Hao Chen, Chao Sung Lai, Tsung Yu Yang, Chien Hsing Lee, Tsung Min Hsieh, Jhyy Cheng Liou

電子物理學系

研究成果: Article › 同行評審

14 引文斯高帕斯（Scopus）

摘要

In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 μs/5 ms) and low programming current (3.5 μA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (> 150 °C) and good endurance (> 10⁴) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application.

原文	English
頁（從 - 到）	214-216
頁數	3
期刊	IEEE Electron Device Letters
卷	28
發行號	3
DOIs	https://doi.org/10.1109/LED.2007.891301
出版狀態	Published - 7 3月 2007

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10.1109/LED.2007.891301

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title = "Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory",

abstract = "In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 μs/5 ms) and low programming current (3.5 μA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (> 150 °C) and good endurance (> 104) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application.",

keywords = "Multilevel operation, source-side injection, wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS)",

author = "Wu, {Woei Cherng} and Tien-Sheng Chao and Peng, {Wu Chin} and Yang, {Wen Luh} and Wang, {Jer Chyi} and Chen, {Jian Hao} and Lai, {Chao Sung} and Yang, {Tsung Yu} and Lee, {Chien Hsing} and Hsieh, {Tsung Min} and Liou, {Jhyy Cheng}",

year = "2007",

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doi = "10.1109/LED.2007.891301",

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T1 - Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory

AU - Wu, Woei Cherng

AU - Chao, Tien-Sheng

AU - Peng, Wu Chin

AU - Yang, Wen Luh

AU - Wang, Jer Chyi

AU - Chen, Jian Hao

AU - Lai, Chao Sung

AU - Yang, Tsung Yu

AU - Lee, Chien Hsing

AU - Hsieh, Tsung Min

AU - Liou, Jhyy Cheng

PY - 2007/3/7

Y1 - 2007/3/7

N2 - In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 μs/5 ms) and low programming current (3.5 μA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (> 150 °C) and good endurance (> 104) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application.

AB - In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 μs/5 ms) and low programming current (3.5 μA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (> 150 °C) and good endurance (> 104) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application.

KW - Multilevel operation

KW - source-side injection

KW - wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS)

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DO - 10.1109/LED.2007.891301

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SN - 0741-3106

VL - 28

SP - 214

EP - 216

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory

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