Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane

Po-Tsun Liu; Ting Chang Chang; Ming Chih Huang; M. S. Tsai; S. M. Sze

doi:10.1116/1.1385684

Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane

Po-Tsun Liu^*, Ting Chang Chang, Ming Chih Huang, M. S. Tsai, S. M. Sze

^*此作品的通信作者

光電工程學系

研究成果: Conference article › 同行評審

2 引文斯高帕斯（Scopus）

摘要

An efficient CMP process for organic low-k MSQ as an intermetal dielectric material is reported. The commercial SS-25™ silica-based slurry combined with the additive TMAH can accelerate the polish rate of organic MSQ film. The presence of nitrogen effectively prevents the post-CMP MSQ from moisture uptake and copper diffusion.

原文	English
頁（從 - 到）	1212-1218
頁數	7
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	19
發行號	4
DOIs	https://doi.org/10.1116/1.1385684
出版狀態	Published - 1 7月 2001
事件	19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, 美國持續時間: 15 10月 2000 → 18 10月 2000

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10.1116/1.1385684

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@article{4ad68b13d2b247a682faab47e74289e1,

title = "Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane",

abstract = "An efficient CMP process for organic low-k MSQ as an intermetal dielectric material is reported. The commercial SS-25{\texttrademark} silica-based slurry combined with the additive TMAH can accelerate the polish rate of organic MSQ film. The presence of nitrogen effectively prevents the post-CMP MSQ from moisture uptake and copper diffusion.",

author = "Po-Tsun Liu and Chang, {Ting Chang} and Huang, {Ming Chih} and Tsai, {M. S.} and Sze, {S. M.}",

year = "2001",

month = jul,

day = "1",

doi = "10.1116/1.1385684",

language = "English",

volume = "19",

pages = "1212--1218",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

note = "19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) ; Conference date: 15-10-2000 Through 18-10-2000",

}

TY - JOUR

T1 - Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane

AU - Liu, Po-Tsun

AU - Chang, Ting Chang

AU - Huang, Ming Chih

AU - Tsai, M. S.

AU - Sze, S. M.

PY - 2001/7/1

Y1 - 2001/7/1

N2 - An efficient CMP process for organic low-k MSQ as an intermetal dielectric material is reported. The commercial SS-25™ silica-based slurry combined with the additive TMAH can accelerate the polish rate of organic MSQ film. The presence of nitrogen effectively prevents the post-CMP MSQ from moisture uptake and copper diffusion.

AB - An efficient CMP process for organic low-k MSQ as an intermetal dielectric material is reported. The commercial SS-25™ silica-based slurry combined with the additive TMAH can accelerate the polish rate of organic MSQ film. The presence of nitrogen effectively prevents the post-CMP MSQ from moisture uptake and copper diffusion.

UR - http://www.scopus.com/inward/record.url?scp=0035535259&partnerID=8YFLogxK

U2 - 10.1116/1.1385684

DO - 10.1116/1.1385684

M3 - Conference article

AN - SCOPUS:0035535259

SN - 1071-1023

VL - 19

SP - 1212

EP - 1218

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

T2 - 19th North American Conference on Molecular Beam Epitaxy (NAMBE-19)

Y2 - 15 October 2000 through 18 October 2000

ER -

Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane

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