An efficient CMP process for organic low-k MSQ as an intermetal dielectric material is reported. The commercial SS-25™ silica-based slurry combined with the additive TMAH can accelerate the polish rate of organic MSQ film. The presence of nitrogen effectively prevents the post-CMP MSQ from moisture uptake and copper diffusion.
|頁（從 - 到）||1212-1218|
|期刊||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版狀態||Published - 1 七月 2001|
|事件||19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States|
持續時間: 15 十月 2000 → 18 十月 2000