Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane

Po-Tsun Liu*, Ting Chang Chang, Ming Chih Huang, M. S. Tsai, S. M. Sze

*此作品的通信作者

研究成果: Conference article同行評審

2 引文 斯高帕斯(Scopus)

摘要

An efficient CMP process for organic low-k MSQ as an intermetal dielectric material is reported. The commercial SS-25™ silica-based slurry combined with the additive TMAH can accelerate the polish rate of organic MSQ film. The presence of nitrogen effectively prevents the post-CMP MSQ from moisture uptake and copper diffusion.

原文English
頁(從 - 到)1212-1218
頁數7
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
19
發行號4
DOIs
出版狀態Published - 1 七月 2001
事件19th North American Conference on Molecular Beam Epitaxy (NAMBE-19) - Tempe, AZ, United States
持續時間: 15 十月 200018 十月 2000

指紋

深入研究「Highly reliable chemical-mechanical polishing process for organic low-k methylsilsesquioxane」主題。共同形成了獨特的指紋。

引用此