Highly reliable amorphous Si TFT with low leakage for AMLCD and AMOLED applications

A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) TFT is developed in this work. In the bottom gate light-shied a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts between source/drain metal and a-Si:H at the edge of a-Si:H island. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility, as high as 1.05 cm ² /Vsec due to the enormous improvement in parasitic resistance. The impressively high performance provides the potential of our proposed a-Si:H TFT to apply for AMLCD and AMOLED technology.