Highly reliable amorphous Si TFT with low leakage for AMLCD and AMOLED applications

Chi Wen Chen*, Tseung-Yuen Tseng, Ting Chang Chang, Kao Cheng Wang, Chen Shuo Huang, Chia Chun Ling, Po-Tsun Liu, Hau Yan Lu

*此作品的通信作者

研究成果: Conference article同行評審

摘要

A novel technology for manufacturing high-performance hydrogenated amorphous silicon (a-Si:H) TFT is developed in this work. In the bottom gate light-shied a-Si:H TFT structure, the side edge of a-Si:H island is capped with extra deposition of heavily phosphorous-doped a-Si layer. Such an ingenuity can effectively eliminate the leakage path between the parasitic contacts between source/drain metal and a-Si:H at the edge of a-Si:H island. In addition, electrical performance of the novel a-Si:H TFT device exhibits superior effective carrier mobility, as high as 1.05 cm 2 /Vsec due to the enormous improvement in parasitic resistance. The impressively high performance provides the potential of our proposed a-Si:H TFT to apply for AMLCD and AMOLED technology.

原文English
文章編號P-15
頁(從 - 到)280-283
頁數4
期刊Digest of Technical Papers - SID International Symposium
36
發行號1
DOIs
出版狀態Published - 1 1月 2005
事件SID Symposium Digest of Technical Papers - Boston, MA, United States
持續時間: 29 7月 200429 7月 2004

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